2

Schottky barrier height of a new ohmic contact NiSi2 to n-type 6H-SiC

Year:
2002
Language:
english
File:
PDF, 174 KB
english, 2002
4

High Current Gain Triple Ion Implanted 4H-SiC BJT

Year:
2009
Language:
english
File:
PDF, 110 KB
english, 2009
20

Si+ implanted AlGaN/GaN HEMTs with reduced on-resistance

Year:
2007
Language:
english
File:
PDF, 276 KB
english, 2007
21

Case report 675

Year:
1991
Language:
english
File:
PDF, 1.24 MB
english, 1991